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2SD2150 - NPN Transistor

Key Features

  • Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max. ) for IC / IB=2A/0.1A Collector 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A Collector 2 MARKING CFR CFS 1 Base 3 Emitter SOT-89 4 A E B F G H J 123 C BCE D K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.