Weitron Technology 2SD2150
NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 40 20 6 3 500 150 -55 to +150 Unit V V V A mW ˚C ˚CELECTRICAL CHARACTERISTICS
(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=50µA, I E =0 Symbol Min Typ Max Unit BVCBO BVCEO BVEBO ICBO IEBO 40 20 6 - - 0.1 0.1 V V V µA µA Collector-Emitter Breakdown Voltage IC=1mA, I B =0 Emitter-Base Breakdown Voltage IE=50µA, I C =0 Collector Cutoff Current VCB=30V, I E=0 Emitter Cutoff Current VEB =5V, I E=0 WEITRON 1/4 15-Aug-05 Datasheet pdf - 2SD2150ELECTRICAL CHARACTERISTICS
(TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=2V, I C=100mA Collector-Emitter Saturation Voltage IC=2A, I B=100mA 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% hFE VCE(sat) 120 5...