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2SD2150
NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 40 20 6 3 500 150 -55 to +150 Unit V V V A mW ˚C ˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=50µA, I E =0
Symbol Min Typ Max Unit
BVCBO BVCEO BVEBO ICBO IEBO
40 20 6 -
-
0.1 0.
2SD2150 Datasheet
