Galaxy Century Microelectronics 2SD2150
20V 3A Low Frequency Transistor
| Part No. | 2SD2150 |
|---|---|
| Datasheet | 2SD2150 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | 20V 3A Low Frequency Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A).● Excellent current gain characteristics.
● Complements the 2SB1424. 2SD2150 Structure Epitaxial planar type NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD2150 CFQ/ CFR/ CFS SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 6 3 IC Collector Current -Continuous 5 PC Collector power dissipation 0.5 TJ Junction Temperature 150 TSTG Storage Temperature *1 Single pulse Pw=10ms -55 to +150 Unit V V V A(DC) A(Pulse)*1 W ℃ ℃ STM0437A 1 Product Specification LOW FREQUENCY TRANSISTER（20V，3A） 2SD2150
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=5...
