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2SD2150 - Low Frequency Transistor

Key Features

  • z Low VCE(sat) :VCE(sat) =0.2V(Typ. ) (IC/IB=2A/0.1A). z Excellent current gain characteristics. z Complements the 2SB1424. Pb Lead-free 2SD2150 Structure Epitaxial planar type NPN silicon transistor.

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Production specification LOW FREQUENCY TRANSISTER（20V，3A） FEATURES z Low VCE(sat) :VCE(sat) =0.2V(Typ.) (IC/IB=2A/0.1A). z Excellent current gain characteristics. z Complements the 2SB1424. Pb Lead-free 2SD2150 Structure Epitaxial planar type NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD2150 CFR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector power dissipation 40 V 20 V 6V 3 A(DC) 5 A(Pulse)*1 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature *1 Single pulse Pw=10ms -55 to +150 ℃ E031 Rev.A www.gmicroelec.