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2SD2166 - Transistor

Key Features

  • 1) Low VCE(sat). VCE(sat) = 0.25V (Typ. ) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-229-D204) 252 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE 253 Transistors hFE values are classified as follows :.

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Datasheet Details

Part number 2SD2166
Manufacturer ROHM
File Size 159.28 KB
Description Transistor
Datasheet download datasheet 2SD2166 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436.