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2SD2211 Datasheet PDF

ROHM Semiconductor 2SD2211

Power Transistor

Part No. 2SD2211
Datasheet 2SD2211 Download
Manufacturer
ROHM Semiconductor
Description Power Transistor
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2SD2211 datasheet page 1 preview

FEATURES

1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 160 160 5 1.5 3 1 2 1 10 150 −55 ∼+150 Unit 0.75 V V V A(DC) A(Pulse) W W W(Tc=25°C) °C °C ∗1 ∗2 ∗3 2SD1918 5.5 1.5 (3) (2) (1) 2.3 0.9 0.4 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Junction temperature Storage temperature 2.3 0.8Min. 5.1 6.5 C0.5 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. ∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board.