ROHM Semiconductor 2SD2671
Transistors
2SD2671 Transistors Low frequency amplifier 2SD2671 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.4 0.85 0.7 zFeatures 1) A collector current is large. 2) VCE(sat) : max. 370mV At lc=1.5A / lB=75mA (1) Base (2) Emitter (3) Collector (3) 1.6 2.8 0~0.1 0.3~0.6 (1) (2) 0.95 0.95 1.9 0.16 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emiter-base voltage Collector current Power dissipation Junction temperature Range of storage temperautre Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Unit Limits V 30 V 30 6 V 2 A 4 A∗1 500 mW 1 ∗2 W 150 °C −55 to +150 °C ∗1 Single pluse, Pw=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltae Collector-emitter breakdown voltae Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min.