Overview: 2SD2673
Transistors Low frequency amplifier
2SD2673
zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm)
TSMT3
1.0MAX
2.9 0.85 0.7 (1) (2) 0.95 0.95 1.9 0.16 (1) Base (2) Emitter (3) Collector Abbreviated symbol : YZ
Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Unit Limits .. V 30 V 30 6 V 3 A 6 A∗1 500 mW 1 ∗2 W 150 °C −55 to +150 °C zPackaging specifications
Package Type Code Basic ordering unit (pieces) 2SD2673 Taping TL 3000 ∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 30 6 − − − 270 − − Typ. − − − − − 120 − 200 40 Max. − − − 100 100 250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1.5A, IB=30mA VCE=2V, IC=200mA ∗ VCE=2V, IE=−200mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz Rev.C 0.3~0.
