ROHM Semiconductor 2SD2673
Transistors
2SD2673 Transistors Low frequency amplifier 2SD2673 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.7 (1) (2) 0.95 0.95 1.9 0.16 (1) Base (2) Emitter (3) Collector Abbreviated symbol : YZ Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Unit Limits V 30 V 30 6 V 3 A 6 A∗1 500 mW 1 ∗2 W 150 °C −55 to +150 °C zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SD2673 Taping TL 3000 ∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min.