Datasheet Summary
Transistors
Small switching (60V, 2A)
!Features
1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge.
!Structure Silicon N-channel MOS FET transistor
!External dimensions (Units : mm)
4.5+- 00..21 1.6±0.1
1.5±0.1
0.5±0.1
4.0- +00..35 2.5+- 00..21
ROHM : MPT3 E I A J : SC-62
1.0±0.3
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.1 1.5±0.1
Abbreviated symbol : KE
0.4- +00..015
(1) Gate (2) Drain (3)...
