Additional preview pages of the 2SK1717 datasheet.
Product details
Features
1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor
!External dimensions (Units : mm)
4.5+.
00..21 1.6±0.1
1.5±0.1
0.5±0.1
4.0.
+00..35 2.5+.
00..21
ROHM : MPT3 E I A J : SC-62
1.0±0.3
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.