ROHM Semiconductor 2SK3019
2.5V Drive Nch MOS FET
| Part No. | 2SK3019 |
|---|---|
| Datasheet | 2SK3019 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | 2.5V Drive Nch MOS FET |
| Buy | Stock & Price |
Transistor 2.5V Drive Nch MOS FET 2SK3019 2SK3019 zStructure Silicon N-channel MOSFET zApplications Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. zPackaging specifications Package Type Code Basic ordering unit (pieces) 2SK3019 Taping TL 3000 0.8 1.6 0.1Min. zDimensions (Unit : mm) EMT3 1.6 0.3 (3) 0.7 0.55 (1)Source (2)Gate (3)Drain (2) (1) 0.2 0.2 0.5 0.5 1.0 0.15 Abbreviated symbol : KN zEquivalent circuit Gate Drain zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed Total power dissipation ID IDP∗1 PD∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Limits 30 ±20 ±100 ±400 150 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ With each pin mounted on the recommended lands.
