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BR24L32FV-W - 4k8 bit electrically erasable PROM

This page provides the datasheet information for the BR24L32FV-W, a member of the BR2 4k8 bit electrically erasable PROM family.

Features

  • 1) 4k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Automatic erase. 5) 32byte Page Write Mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ. ) Read (5V) : 0.2mA (Typ. ) Standby (5V) : 0.1µA (Typ. ) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin 9) High reliability EEPROM with Double-Cell structure. 10) High reliability fine pattern CMOS technology.

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Datasheet preview – BR24L32FV-W

Datasheet Details

Part number BR24L32FV-W
Manufacturer ROHM
File Size 670.27 KB
Description 4k8 bit electrically erasable PROM
Datasheet download datasheet BR24L32FV-W Datasheet
Additional preview pages of the BR24L32FV-W datasheet.

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Full PDF Text Transcription

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BR24L32-W / BR24L32F-W / BR24L32FJ-W / BR24L32FV-W Memory ICs 4k×8 bit electrically erasable PROM BR24L32-W / BR24L32F-W / BR24L32FJ-W BR24L32FV-W The BR24L32-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I2C BUS is a registered trademark of Philips. zApplications General purpose zFeatures 1) 4k registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Automatic erase. 5) 32byte Page Write Mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SSOP-B8 pin 9) High reliability EEPROM with Double-Cell structure.
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