BR24L64FJ-W
BR24L64FJ-W is 8k x 8 bit electrically erasable PROM manufactured by ROHM.
feature
(WP pin) . Inhibit to WRITE at low VCC. 8) Small package
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- DIP8 / SOP8 pin 9) High reliability EEPROM with Double-Cell structure 10) High reliability fine pattern CMOS technology. 11) Endurance : 1,000,000 erase / write cycles 12) Data retention : 40 years 13) Filtered inputs in SCL- SDA for noise suppression. 14) Initial data FFh in all address. z Absolute maximum ratings (Ta=25°C)
Parameter Supply voltage
Symbol VCC
Power dissipation
Pd
Storage temperature
Tstg
Operating temperature
Topr
Terminal voltage
- ∗1 Degradation is done at 8.0m W/°C for operation above 25°C. ∗2 Degradation is done at 4.5m W/°C for operation above 25°C.
Limits
- 0.3~+6.5 800(DIP8) ∗1 450(SOP8) ∗2 450(SSOP-J8) ∗2
- 65~+125
- 40~+85
- 0.3~VCC+0.3
Unit V m W
°C °C V
1/25
Memory ICs
BR24L64-W / BR24L64F-W / BE24L64FJ-W z Remended operating conditions
Parameter Supply voltage Input voltage
Symbol VCC VIN
Limits 1.8 to 5.5 0 to VCC
Unit V V z DC operating characteristics (Unless otherwise specified Ta=- 40 to 85°C, VCC=1.8 to 5.5V)
Parameter "HIGH" input volatge 1 "LOW" input volatge 1 "HIGH" input volatge 2 "LOW" input volatge 2 "LOW" output volatge 1 "LOW" output volatge 2 Input leakage current Output leakage current
Symbol VIH1 VIL1 VIH2 VIL2 VOL1 VOL2 ILI ILO
Min. 0.7VCC
- 0.8VCC
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- - 1
- 1
Typ.
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