ROHM Semiconductor DA221M
Switching Diode
FEATURES
High reliability d Small mold type 200 mA 100 mA 300 mA●Inner Circuit nde s
●Application e n General switching m ig
●Structure s Epitaxial planar m e
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ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) o D Parameter Symbol Reverse voltage VR c Repetitive peak reverse voltage VRM e Average rectified forward current Io w Forward current IFM R e Peak forward surge current IFSM Power dissipation * PD t N Junction temperature Tj Storage temperature Tstg o*2 elements total N●Characteristics (Ta = 25ºC)●Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Basic Ordering Unit(pcs) 8000 Taping Code T2L Marking K Conditions - t=1μs - Limits Unit 20 V 20 V 100 mA 200 mA 300 mA 150 mW 150 ℃ -55 ~ 150 ℃ Value per element Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=10mA - - 1.0 V Reverse current IR VR=15V - - 0.1 μA Capacitance between terminals * Ct VR=6.0V f=1.0MHz - - 4.0 pF Reverse recoverytime trr - - - - ns ※Caution:static electricity * Capacitance:b/w 1pin and 2pin © 2016 ROHMCo., Ltd.All rights reserved.