DAN217UM Datasheet PDF

Data Sheet Switching Diode DAN217UM lApplications High speed switching lDimensions (Unit : mm) lLand size figure (Unit : mm) lFeatures 1)Small mold, flat lead type. (UMD3F) 2)High reliability lConstruction Silicon epitaxial planer lStructure ROHM : UMD3F dot (year week factory) lTaping dimensions (Unit : mm) φ 1.55±0.05 2.0±0.05 4.0±0.1 1.75±0.1 0.3±0.1 3.5±0.05 5.5±0.2 0～0.5 4.0±0.1 2.2±0.08 φ 0.5±0.05 2.4±0.08 8.0±0.2 1.15±0.1 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Rated in slash put frequency f lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR Ct trr Limits 80 80 300 100 4 200 150 -55 to +150 100 Unit V V mA mA A mW/Total C C MHz Min. - Typ. - Max. 1.2 0.2 3.5 4.0 Unit V μA pF ns IF=100mA VR=70V Conditions VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω © 2011 ROHM Co., Ltd.