ROHM Semiconductor DAN222
Band Switching Diode
FEATURES
High reliability Small mold type High Speed switching●Inner Circuit Data sheet NotNeRewcDoemsimgennsded for
●Application High speed switching
●Structure Epitaxial planar
●
ABSOLUTE MAXIMUM RATINGS
(Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Power dissipation * PD Junction temperature Storage temperature Tj Tstg *2 elements total●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between terminals Ct Reverse recoverytime trr ※Caution:static electricity
●Packaging Specifications Packing Emb