EM6K7 Datasheet PDF

1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zApplications Switching zDimensions (Unit : mm) EMT6 zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable equipment. zInner circuit (6) Each lead has same dimensions Abbreviated symbol : K07 (5) ∗1 (4) zPackaging specifications Package Type Code Basic ordering unit (pieces) EM6K7 Taping T2R 8000 ∗2 ∗2 ∗1 (1) (2) (3) zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2> Parameter Drain−source voltage Gate−source voltage Drain current Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 PD ∗2 ∗1 Esd Protection diode ∗2 Body Diode (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain Limits 20 ±8 ±200 ±400 150 120 150 −55 to +150 Unit V V mA mA mW / TOTAL mW / ELEMENT °C °C Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land.