EMZ6.8E Datasheet | ROHM

Diodes Zener diode EMZ6.8E z Applications Voltage regulation z External dimensions (Units : mm) 1.0 (5) 0.1 (4) 0.2 0.1 0.5 0.5 0.2 0.1 (1) 1.6 0.1 z Construction Silicon epitaxial planar z Absolute maximum ratings (Ta=25°C) Parameter Power dissipation∗ Junction temperature Storage temperature Symbol Limits 150 150 - 55~+150 Tj Tstg ∗ Total of 2 elements z Electrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Operating resistance Symbol VZ IR ZZ Min. 6.47 - - Typ. - - - Max. 7.14 0.5 40 Unit V µA Ω IZ=5m A VR=3.5V IZ=5m A Conditions Note ) Please pay attention to static electricity when handing. D6F (2) (3) 0.05 z Features 1) Ultra small mold type. (EMD5) 2) posite type with two anode mon elements 3) High reliability 1.2 0.1 1.6 0.1 0~0.1 0.05 z Equivalent circuit Unit m W ˚C ˚C 1/2 Diodes z Others Parameter Equipment position IEC- 1000- 4- 2 Charge discharge capacitance : 150p F Discharge resistance Repeat by 10 times Criterion No errornious operation Contact In air Parameter Junction capacitance Test condition f=1MHz, VR=5V 9p F : ±8k V : ±15k V Typical data : 330Ω z Electrical characteristic curves (Ta=25°C) 100m 10m 1µ CAPACITANCE BETWEEN TERMINALS: CT (p F) 1m REVERSE CURRENT: IR (A) ZENER CURRENT : Iz...