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2.5V Drive Nch+SBD MOSFET
ES6U41
Structure Silicon N-channel MOSFET / Schottky barrier diode
Features 1) Nch MOSFET and schottky barrier diode-
are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode.
Applications Switching
Package specifications
Package
Type
Code
Basic ordering unit (pieces)
ES6U41
Taping T2R 8000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
VDSS VGSS
ID IDP ∗1 IS ISP ∗1
Channel temperature Power dissipation
Tch PD ∗2
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Limits 30 ±12 ±1.5 ±6.0 0.75 6.0
150 0.