ROHM Semiconductor HS8K1
Power MOSFET
| Part No. | HS8K1 |
|---|---|
| Datasheet | HS8K1 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
HS8K1 30V Nch+Nch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 14.6mΩ 11.8mΩ ±10A ±11A 2.0W lFeatures 1) Low on - resistance 2) Pb-free lead plating ; RoHS compliant 3) Halogen Free lOutline HSML3030L10 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Basic ordering unit (pcs) 8.0 3000 Taping code TB Marking HS8K1 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Nch Unit Drain - Source voltage VDSS 30 30 V Continuous drain current ID ±10 ±11 A Pulsed drain current IDP*1 ±40 ±44 A Gate - Source voltage VGSS ±20 ±20 V Avalanche current, single pulse IAS*2 10 11 A Avalanche energy, single pulse EAS*2 7.6 9.1 mJ Power dissipation PD*3 2.0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2017 ROHM Co., Ltd. All rights reserved. 1/16 20170817 - Rev.005 HS8K1 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min.
