ROHM Semiconductor HS8K11
Power MOSFET
| Part No. | HS8K11 |
|---|---|
| Datasheet | HS8K11 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
HS8K11 30V Nch+Nch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Nch 30V 30V 17.9mΩ 13.3mΩ ±7A ±11A 2.0W lFeatures 1) Low on - resistance 2) Pb-free lead plating ; RoHS compliant 3) Halogen Free lOutline HSML3030L10 lInner circuit Datasheet lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 180 Switching Type Tape width (mm) Quantity (pcs) 8.0 3000 Taping code TB Marking HS8K11 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Nch Unit Drain - Source voltage VDSS 30 30 V Continuous drain current ID ±7 ±11 A Pulsed drain current IDP*1 ±28 ±44 A Gate - Source voltage VGSS ±20 ±12 V Avalanche current, single pulse IAS*2 7.0 11 A Avalanche energy, single pulse EAS*2 3.6 9.3 mJ Power dissipation PD*3 2.0 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/16 20190527 - Rev.005 HS8K11 lThermal resistance Parameter Thermal resistance, junction - ambient Datasheet Symbol RthJA*3 Values Min.
