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QS5U36 - 1.5V Drive Nch+SBD MOSFET

Features

  • 1) The QS5U36 combines Nch MOSFET with a 　　Schottky barrier diode in a single TSMT5 　　package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 l.

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Datasheet Details

Part number QS5U36
Manufacturer ROHM
File Size 1.50 MB
Description 1.5V Drive Nch+SBD MOSFET
Datasheet download datasheet QS5U36 Datasheet

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Other Datasheets by ROHM

Part Number Description
QS5U33 4V Drive Pch+SBD MOSFET
QS5U34 1.8V Drive Nch+SBD MOSFET
QS5U12 2.5V Drive Nch+SBD MOSFET
QS5U13 2.5V Drive Nch+SBD MOSFET
QS5U16 Small switching Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QS5U36 　　1.5V Drive Nch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 20V 81mΩ ±2.5A 1.25W lOutline TSMT5 　 　 　　　　　　 　　　　　　 　 　 　 　　　　　　 lFeatures 1) The QS5U36 combines Nch MOSFET with a 　　Schottky barrier diode in a single TSMT5 　　package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) Marking U36 Parameter Symbol Value Unit Drain - Source voltage VDSS 20 V Gate - Source voltage VGSS ±10 V Continuous drain current ID ±2.
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