ROHM Semiconductor QS6M3
Small switching Transistors
| Part No. | QS6M3 |
|---|---|
| Datasheet | QS6M3 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Small switching Transistors |
| Buy | Stock & Price |
QS6M3 Transistors Small switching QS6M3 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zExternal dimensions (Unit : mm) TSMT6 1pin mark (1) 2.8 1.6 (6) 0.4 (3) Each lead has same dimensions Abbreviated symbol : MO3 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zEquivalent circuit Limits Unit Tr1 : Nch Tr2 : Pch 30 −20 V 12 −12 V ±1.5 ±1.5 A ±6.0 ±6.0 A ∗1 0.8 −0.75 A 6.0 −6.0 A ∗1 1.25 1.25 W / Total ∗2 150 150 °C −55 to +150 −55 to +150 °C (6) (5) (4) Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗2 0.85 zApplication Power switching, DC / DC converter. 0.16 (4) ∗1 (1) (2) ∗1 (3) 2.9 (2) (5) ∗2 ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (Nch) Gate (2) Tr2 (Pch) Source (3) Tr2 (Pc...
