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QS6M3 - Small switching Transistors

Key Features

  • 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zExternal dimensions (Unit : mm) TSMT6 1pin mark (1) 2.8 1.6 (6) 0.4 (3) Each lead has same dimensions Abbreviated symbol : MO3 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current ∗1 Pw≤10µs, Duty cycle≤1% ∗.

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Datasheet Details

Part number QS6M3
Manufacturer ROHM
File Size 86.29 KB
Description Small switching Transistors
Datasheet download datasheet QS6M3 Datasheet

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QS6M3 Transistors Small switching QS6M3 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT6). zExternal dimensions (Unit : mm) TSMT6 1pin mark (1) 2.8 1.6 (6) 0.4 (3) Each lead has same dimensions Abbreviated symbol : MO3 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25°C) Channel temperature Storage temperature Drain current ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zEquivalent circuit Limits Unit Tr1 : Nch Tr2 : Pch 30 −20 V 12 −12 V ±1.5 ±1.5 A ±6.0 ±6.0 A ∗1 0.8 −0.75 A 6.0 −6.0 A ∗1 1.25 1.