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QS6U22 - 2.5V Drive Pch+SBD MOSFET

Datasheet Summary

Features

  • 1) The QS6U22 combines Pch MOSFET with a   Schottky barrier diode in a single TSMT6   package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 l.

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Datasheet Details

Part number QS6U22
Manufacturer ROHM
File Size 1.31 MB
Description 2.5V Drive Pch+SBD MOSFET
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QS6U22   2.5V Drive Pch+SBD MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD -20V 215mΩ ±1.5A 1.25W lOutline TSMT6                                lFeatures 1) The QS6U22 combines Pch MOSFET with a   Schottky barrier diode in a single TSMT6   package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication switching Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) Marking U22 Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source voltage VGSS ±12 V Continuous drain current ID ±1.
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