ROHM Semiconductor R6008FNJ
MOSFET
| Part No. | R6008FNJ |
|---|---|
| Datasheet | R6008FNJ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
1) Low on-resistance.●Inner circuit (2) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) (1) Gate (2) Drain *1 (3) Source *1 Body Diode 5) Parallel use is easy. (3) 6) Pb-free lead plating ; RoHS compliant
●Packaging specifications Packaging Taping Reel size (mm) 330
●Application Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 24 1,000 TL Marking R6008FNJ
●Absolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 8 3.9 32 30 4.3 3.4 4 119 150 55 to 150 15 V A A A V mJ mJ A W °C °C V/ns © 2015 ROHM Co., Ltd.
