ROHM Semiconductor R6009ENX
Power MOSFET
| Part No. | R6009ENX |
|---|---|
| Datasheet | R6009ENX Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6009ENX Nch 600V 9A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.535Ω ID ±9A TO-220FM PD 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±9 A ±18 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive IAS EAS*3 EAS*3 1.4 A 153 mJ 0.23 mJ Power dissipation (Tc = 25°C) PD 48 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20200121 - Rev.003 R6009ENX lAbsolute maxim...
