R6020ANX Datasheet PDF

R6020ANX Nch 600V 20A Power MOSFET Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline RDS(on)(Max.) 0.22Ω ID ±20A TO-220FM PD 85W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 500 Taping code - Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6020ANX Unit Drain - Source voltage VDSS 600 V Continuous drain current TC = 25°C TC = 100°C ID*1 ID*1 ±20 A ±9.7 A Pulsed drain current IDP*2 ±80 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 10 A Avalanche energy, single pulse EAS*3 26.7 mJ Avalanche energy, repetitive EAR*4 3.5 mJ Power dissipation (Tc = 25°C) PD 85 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ Reverse diode dv/dt dv/dt 15 V/ns © 2016 ROHM Co., Ltd.