ROHM Semiconductor R6020ANZ
Drive Nch MOSFET
FEATURES
1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45● Packaging specifications Type R6020ANZ Package Code Basic ordering unit (pieces) Bulk 360
● Inner circuit ∗1
● Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 20 80 20 80 10 26.7 120 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS *1 *3 *1 *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25°C
● Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c) * Limits 1.04 Unit C / W © 2011 ROHM Co., Ltd. All rights reserved.