ROHM Semiconductor RB058L150
Schottky Barrier Diode
| Part No. | RB058L150 |
|---|---|
| Datasheet | RB058L150 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
1) Small power mold type. (PMDS) 2) Ultra low IR 3) High reliability 98 12 1.5±0.2 0.1±0.02 0.1 2.0±0.2 ROHM : PMDS JEDEC :SOD-106 1 2 Manufacture Date PMD2●Structure
●Construction Silicon epitaxial planar
●Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ11.5.555± 00..0055 cathode anode 0.3 5.3±0.1 0.05 9.5±0.1 5.5±0.05 1.75±0.1 12±0.2 2.9±0.1 4.0±0.1
●Absolute maximum ratings (Ta = 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz●1cyc) IFSM Junction temperature Tj Storage temperature Tstg (*1) Mounting on epoxi board. 180°Half sine wave Limits 150 150 3 90 150 55 to 150 φ11..5555 Unit V V A A °C
