power mold type. (PMDU)
2) Low IR. 1
for PMDU
3) High reliability. d.
Construction de Silicon epitaxial
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1.
Structure.
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
1.75±0.1
3.5±0.05
mmeensigns 1.81±0.1
o D.
Absolute maximum ratings (Ta = 25°C)
c Parameter
Symbol
e Reverse voltage (repetitive)
VRM
w Reverse voltage (DC)
VR
R e Average rectified forward current (.
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Schottky Barrier Diode
RB060M-60
Application General rectification
Dimensions (Unit : mm)
1.6±0.1
0.1±0.1 0.05
Datasheet Land size figure (Unit : mm)
1.2
2.6±0.1 3.5±0.0.212
0.85 3.05
Features 1) Small power mold type.
(PMDU)
2) Low IR.
1
for PMDU
3) High reliability.
d Construction de Silicon epitaxial
0.9±0.1
ROHM : PMDU JEDEC :SOD-123
Manufacture Date
0.8±0.1
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ11..5555±00.0.055
1.75±0.1
3.5±0.05
mmeensigns 1.81±0.1
o D Absolute maximum ratings (Ta = 25°C)
c Parameter
Symbol
e Reverse voltage (repetitive)
VRM
w Reverse voltage (DC)
VR
R e Average rectified forward current (*1)
Io
t N Forward current surge peak (60Hz·1cyc) IFSM
o Junction temperature
Tj
NStorage temperature
Tstg
4.
RB060M-60 Datasheet
