ROHM Semiconductor RB080L-30
Schottky Barrier Diodes
| Part No. | RB080L-30 |
|---|---|
| Datasheet | RB080L-30 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
APPLICATIONS
General rectification●Dimensions (Unit : mm)
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FEATURES
1)Small power mold type. (PMDS) 2)High reliability 3)Low VF●Structure Silicon epitaxial planer 2.6±0.2 21 ①② 1.5±0.2 0.1±0.02 0.1 2.0±0.2 ROHM : PMDS JEDEC : SOD-106 ① ② year week factory
●Taping dimensions (Unit : mm) 2.0 0.05 4.0 0.1 4.5±0.2 1.2±0.3 5.0±0.3 2.0 4.2
●Land size figure (Unit : mm) 2.0 PMDS
●Structure 1.55 0.05 0.3 5.3 -+00..01 9.5 0.1 5.5 0.05 1.75 0.1 12 0.2 2.9 0.1 4.0 0.1 1.55
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 30 30 5 V V A Forward current surge peak (60Hz●1cyc) Junction temperature IFSM Tj 70 150 A C Storage temperature Tstg 40 to 150 C (*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX.
●Electrical characteristic
