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RB083L-20
Diodes
Schottky barrier diode
RB083L-20
!Applications High frequency rectification For switching power supply !External dimensions (Units : mm)
1.5±0.2
!Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) IO=5A guaranteed despite the size.
CATHODE MARK
4.5±0.2
1.2±0.3
5
7
0.1 +0.02 −0.1
2.0±0.2 2.6±0.2
!Construction Silicon epitaxial planar
ROHM : PMDS EIAJ : − JEDEC : SOD-106
Date of manufacture EX. 1999.12 → 9,C
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Symbol VRM VR IO IFSM Tj Tstg Limits 25 20 5 70 125 −40~+125 Unit V V A A °C °C
Peak forward surge current
(60Hz 1 )
Junction temperature Storage temperature
∗ When mounted on alumina PCBs (82×30×1.0mm), Tc Max.
RB083L-20 Datasheet
