RB160M-90 Datasheet | ROHM

Diodes Schottky barrier diode RB160M-90 z Applications General rectification z External dimensions (Unit : mm) 1.6±0.1 0.15±0.03 z Land size figure (Unit : mm) 1.2 0.85 z Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability. 2.6±0.1 3.5±0.2 0～0.1 0.9±0.1 0.8±0.1 PMDU 0.15±0.03 0.8±0.1 0.6 z Structure 0.45 0.6 z Construction Silicon epitaxial planar ROHM : PMDU JEDEC : SOD-123 ① Manufacture 製造年月Date z Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0.05 0.25±0.05 0～0.1 3.5±0.05 8.0±0.2 1.81±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.8±0.05 3.71±0.05 1.05±0.1 z Absolute maximum ratings (Ta=25°C) Param eter R evers e voltage (repetitive peak) R evers e voltagec(DC) Average rectified forward current Forward current s urge peak （ 60Hz- 1cyc） J unction tem perature S torage tem perature Mounted on epoxy board. 180 ° Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg Lim its 90 90 1 30 150 -40 to +150 Unit V V A A ℃ ℃ z Electrical characteristics (Ta=25°C) Param eter Forward voltage Revers e current Sym bol VF IR Min. Typ. Max. 0.73 100 Unit V µA IF =1.0A VR =90V Conditions ① 1/3 Diodes z Electrical characteristic curves (Ta=25°C) Ta=150℃ 1 Ta=75℃ 1000 REVERSE CURRENT:IR(u A) FORWARD CURRENT:IF(A) 0.1 Ta=150℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(p F) Ta=125℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ 100 10000 Ta=125℃ 1000 条件：f=1MHz f=1MHz 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(m V) VF-IF CHARACTERISTICS 650 Ta=25℃ IF=1A n=30pcs 100 90 REVERSE CURRENT:IR(u A) 80 70 60 50 40 AVE:478.3n...