Overview: Data Sheet Schottky Barrier Diode
RB411VA-50
Applications General rectification Dimensions (Unit : mm)
0.17±0.1 0.05 1.3±0.05 Land size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 TUMD2 Construction Silicon epitaxial planar
0.8±0.05 Structure
ROHM : TUMD2 0.1 dot (year week factory) + day
0.6±0.2 Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
1.75±0.1 φ1.55±0.1 0 0.25±0.05 .DataSheet.co.kr 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 0 2.75 2.8±0.05 0.9±0.08 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 50 20 0.5 3 125 40 to 125 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Forawrd voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR Ct Min. - Typ. 20 Max. 0.50 0.30 30 - Unit V V μA pF IF=500mA IF=10mA VR=10V Conditions VR=10V , f=1MHz .rohm. © 2011 ROHM Co., Ltd. All rights reserved. 1/3 0.8 0.
