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Data Sheet
Schottky Barrier Diode
RB411VA-50
Applications General rectification Dimensions (Unit : mm)
0.17±0.1 0.05 1.3±0.05
Land size figure (Unit : mm) 1.1
1.9±0.1
2.5±0.2
TUMD2
Construction Silicon epitaxial planar
0.8±0.05
Structure
ROHM : TUMD2 0.1 dot (year week factory) + day
0.6±0.2
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
1.75±0.1
φ1.55±0.1 0
0.25±0.05
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3.5±0.05
8.0±0.2
1.43±0.05
4.0±0.1
φ1.0±0.2 0
2.75
2.8±0.05
0.9±0.08
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 50 20 0.