ROHM Semiconductor RB425D
Schottky barrier diode
| Part No. | RB425D |
|---|---|
| Datasheet | RB425D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low power rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 1.9 0.3～0.6 1.0MIN. 2.4
●
FEATURES
1) Small mold type. (SMD3) 2) Low IR 3) High reliability.●Construction Silicon epitaxial planer 2.9±0.2 0.4 ＋－00..105 E各aリc同hー寸leド法aとd もhas same dimension (3) ＋0.1 0 .15 －0.06 0.95 2 .8 ±0 .2 1 .6－＋00 ..12 (2) 0.95 0.95 1.9±0.2 (1) 0～ 0.1 0 .8±0 .1 1. 1±0. 2 0. 01 ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
●Taping specifications (Unit : mm) 4.0±0 .1 2.0±0.05 φ1 .5± 0.1 0 0.8MIN. SMD3
●Structure 0.3±0.1 1.75±0.1 3.2±0.1 5.5±0.2 3.5±0.05 8.0±0.2 3.2±0.1 0～0.5 3 .2±0 .1
●Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz●1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode：Io/2 Symbol VRM VR Io IFSM Tj Tstg 4.0±0.1 φ1.05MIN Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C 1.35±0.1
●Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min.
