1) Compact size. 2) High reliability. 3) Extremely low forward voltage. 4) This is a composite component and is ideal for reducing the number of components used. 0~0.1
RB481K
Diodes
!Electrical characteristic curves (Ta=25°C)
Ta=125˚C.
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RB481K
Diodes
Schottky Barrier Diode
RB481K
!Applications Low current rectification !External dimensions (Units: mm)
1.25±0.1 0.6 0.3±0.1 0.65 0.2±0.1 0.9±0.1 0.7 (1) (4)
1.25±0.1 2.1±0.1
(2) (3) 0.2±0.1 0.2±0.1 0.65 0.65 1.25±0.1 2.0±0.2 (1) (4) 0.15±0.05
0.1Min.
!Construction Silicon epitaxial planar
(2) (3)
ROHM : UMD4 EIAJ : SC - 82
!Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature
∗ 60 Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 30 30 0.2 1 125 −40~+125
Unit V V A A °C °C
!Electrical characteristics (Ta=25°C unless otherwise noted)
Parameter Forward voltage Symbol VF1 VF2 VF3 VF4 Reverse current IR Min. − − − − − Typ. 0.18 0.25 0.34 0.40 3.6 Max.
RB481 Datasheet
