Overview: RB481K
Diodes Schottky Barrier Diode
RB481K
!Applications Low current rectification !External dimensions (Units: mm)
1.25±0.1 0.6 0.3±0.1 0.65 0.2±0.1 0.9±0.1 0.7 (1) (4)
1.25±0.1 2.1±0.1 (2) (3) 0.2±0.1 0.2±0.1 0.65 0.65 1.25±0.1 2.0±0.2 (1) (4) 0.15±0.05
0.1Min. !Construction Silicon epitaxial planar
(2) (3) ROHM : UMD4 EIAJ : SC - 82 !Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature
∗ 60 Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 0.2 1 125 −40~+125 Unit V V A A °C °C !Electrical characteristics (Ta=25°C unless otherwise noted)
Parameter Forward voltage Symbol VF1 VF2 VF3 VF4 Reverse current IR Min. − − − − − Typ. 0.18 0.25 0.34 0.40 3.6 Max. 0.28 0.33 0.43 0.50 30 Unit V V V V µA IF=1mA IF=10mA IF=100mA IF=200mA VR=10V Conditions 3 U !
