ROHM Semiconductor RB705D
Schottky barrier diode
| Part No. | RB705D |
|---|---|
| Datasheet | RB705D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low current rectification●Dimensions (Unit : mm)
●Land size figure (Unit : mm) 0.8MIN. 1.0MIN. 2.4
●
FEATURES
1) Small mold type. (SMD3) 2) Low IR 3) High reliability.●Construction Silicon epitaxial planar 2.9± 0.2 各リードとも 0.4 ＋0.1 Each同le寸a法d has same dimension －0.05 (3) ＋0.1 0.15－0.06 0.95 2.8±0.2 1.6－ ＋00..12 (2) (1) 0.95 0.95 1.9± 0.2 1.9 0～ 0.1 SMD3 0.3～0.6 0 . 8± 0 . 1 11..11±0000....2102 1
●Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
●Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 0 0.3±0.1 1.75±0.1 3.2±0.1 5.5±0.2 3 .5±0.05 8.0±0.2 3.2±0.1 0～0.5 3.2±0.1 4.0±0.1
●Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz●1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode : lo/2 Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 200 125 40 to 125 φ1.05MIN Unit V V mA mA °C °C 1.35±0.1
●Electrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min.
