ROHM Semiconductor RB751CS-40
Schottky barrier diode
| Part No. | RB751CS-40 |
|---|---|
| Datasheet | RB751CS-40 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Schottky barrier diode |
| Buy | Stock & Price |
APPLICATIONS
Low current rectification●Dimensions (Unit : mm)
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FEATURES
1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0 .6±0.05 0.16±0.05●Land size figure (Unit : mm) 0.9±0.05 1.0±0.05
●Structure Silicon epitaxial planer 0.156 0.35±0.1 0.37±0.03 ROHM : VMN2 dot (year week factory)+day
●Structure
●Taping dimensions (Unit : mm)
●Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C
●Electrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Capacitance between terminals VF - 0.37 IR - 0.5 Ct - 2 - Unit Conditions V IF=1mA μA VR=30V pF VR=1V , f=1MHz © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.A RB751CS-40
●Electrical characteristic curves FORWARD CURRENT:IF(mA) 100 10 Ta=7...
