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RB751CS-40 - Schottky barrier diode

Key Features

  • 1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0 .6±0.05 0.16±0.05.
  • Land size figure (Unit : mm) 0.9±0.05 1.0±0.05.
  • Structure Silicon epitaxial planer 0.156 0.35±0.1 0.37±0.03 ROHM : VMN2 dot (year week factory)+day.
  • Structure.
  • Taping dimensions (Unit : mm).
  • Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak(60Hz/1cyc) J.

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Datasheet Details

Part number RB751CS-40
Manufacturer ROHM
File Size 0.96 MB
Description Schottky barrier diode
Datasheet download datasheet RB751CS-40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky barrier diode RB751CS-40 Applications Low current rectification Dimensions (Unit : mm) Features 1) Ultra Small mold type(VMN2) 2) Low VF 3) High reliability 0 .6±0.05 0.16±0.05 Land size figure (Unit : mm) 0.9±0.05 1.0±0.05 Structure Silicon epitaxial planer 0.156 0.35±0.1 0.37±0.03 ROHM : VMN2 dot (year week factory)+day Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak(60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 40 30 30 200 125 40 to 125 Unit V V mA mA °C °C Electrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max.