Semtech Corporation RB751CS-40
Silicon Epitaxial Planar Schottky Barrier Diode
FEATURES
● Small surface mounting type● Low forward voltage
● High reliability PINNING PIN 1 2
DESCRIPTION
Cathode Anode 1 52 Transparent top view Marking Code: 5 Simplified outline DFN1006-2B and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) Parameter Peak Reverse Voltage Reverse Voltage Average rectified forward current HPeak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature CStorage Temperature Range ECharacteristics at Ta = 25℃ Parameter TForward Voltage at IF = 1 mA Reverse Current Mat VR= 30 V Capacitance Between Terminals SEat VR= 1 V, f = 1 MHz Symbol VRM VR IF(AV) IFSM Tj Tstg Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA ℃ ℃ Symbol VF IR CT Typ. 2 Max. 0.37 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 02/07/2013 Rev: 02 RB751CS-40 PACKAGE OUTLINE Plastic surface mounted package; 2 leads DFN1006-2B EMTECHUNIT A A