Overview: Data Sheet Schottky Barrier Diode
RBQ10B45A
lApplications General rectification lDimensions (Unit : mm)
6.5±0.2 2.3±0.2 0.1 lLand size figure (Unit : mm) 6.0
0.5±0.1 C0.5 5.1±0.2 0.1 1.6
① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5 1.6 3)High reliability 0.9 （1） （2） （3） CPD 2.3 2.3 lConstruction Silicon epitaxial planer 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 lStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping specifications (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc)(*2) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode. (*2)Per diode. lElectrical characteristics(Tj=25°C) Parameter Forward voltage Reverse current Limits 45 45 10 50 150 -40 to +150 Unit V V A A °C °C Symbol VF IR Min. - Typ. - Max. 0.65 0.15 Unit V mA Conditions IF=5A VR=45V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/ 3.0 2.0 5.5±0.
