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RBQ10B45A - Schottky Barrier Diode

Features

  • 1)Power mold type. (CPD) 2)Low IR 1.5±0.3 6.0 RBQ10B45A 　 Data Sheet 10 100000 Ta=150°C 10000.

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Datasheet Details

Part number RBQ10B45A
Manufacturer ROHM
File Size 1.29 MB
Description Schottky Barrier Diode
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Data Sheet Schottky Barrier Diode RBQ10B45A lApplications General rectification lDimensions (Unit : mm) 6.5±0.2 2.3±0.2 0.1 lLand size figure (Unit : mm) 6.0 0.5±0.1 C0.5 5.1±0.2 0.1 1.6 ① 0.8 min 0.75 0.65±0.1 2.5 9.5±0.5 1.6 3)High reliability 0.9 （1） （2） （3） CPD 2.3 2.3 lConstruction Silicon epitaxial planer 0.5±0.1 1.0±0.2 2.3±0.2 2.3±0.2 lStructure ROHM : CPD JEITA : SC-63 ① Manufacture Date lTaping specifications (Unit : mm) www.DataSheet.co.kr lAbsolute maximum ratings(Tc=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc)(*2) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode.
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