Datasheet Details
| Part number | RBQ10B65A |
|---|---|
| Manufacturer | ROHM |
| File Size | 560.66 KB |
| Description | Schottky Barrier Diode |
| Download | RBQ10B65A Download (PDF) |
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| Part number | RBQ10B65A |
|---|---|
| Manufacturer | ROHM |
| File Size | 560.66 KB |
| Description | Schottky Barrier Diode |
| Download | RBQ10B65A Download (PDF) |
|
|
|
Data Sheet Schottky Barrier Diode RBQ10B65A Applications General rectification Dimensions (Unit : mm) 6.5±0.2 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 5.1±0.2 0.1 Land size figure (Unit : mm) 6.0 5.5±0.3 0.1 0.8 min 0.9 （1） （2） （3） 2.3±0.2 2.3±0.2 0.75 0.65±0.1 2.5 3)High reliability 0.5±0.1 1.0±0.2 CPD 2.3 2.3 Construction Silicon epitaxial planer Structure ROHM : CPD JEITA : SC-63 Manufacture Date Taping specifications (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings（Tc=25°C） Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz・1cyc）（*2） Junction temperature Tj Storage temperature Tstg (*1) Business frequencies, 1/2 Io per diode.
(*2) Per diode.
Electrical characteristics（Tj=25°C） Parameter Symbol VF Forward voltage Reverse current IR Limits 65 65 10 50 150 −40 to +150 Unit V V A A °C °C Min.
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