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Data Sheet
Schottky Barrier Diode
RBQ10B65A
Applications General rectification Dimensions (Unit : mm)
6.5±0.2 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 5.1±0.2 0.1
Land size figure (Unit : mm)
6.0
5.5±0.3 0.1
0.8 min 0.9 （1） （2） （3） 2.3±0.2 2.3±0.2 0.75 0.65±0.1 2.5
3)High reliability
0.5±0.1 1.0±0.2
CPD
2.3
2.3
Construction Silicon epitaxial planer
Structure
ROHM : CPD JEITA : SC-63
Manufacture Date
Taping specifications (Unit : mm)
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Absolute maximum ratings（Tc=25°C） Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz1cyc）（*2） Junction temperature Tj Storage temperature Tstg (*1) Business frequencies, 1/2 Io per diode. (*2) Per diode.
RBQ10B65A Datasheet
