RDS035L03
RDS035L03 is Switching manufactured by ROHM.
..
Transistors
Switching (30V, 3.5A)
RDS035L03 z Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. z Application Switching z Structure Silicon N-channel MOS FET z External dimensions (Units : mm)
Max.1.75
+0.2 5.0-
(5)
(4)
(8)
+0.15 3.9- +0.3 6.0- +0.1 0.5-
(1)
0.15 +0.1 1.5-
ROHM : SOP8 z Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
(1) (2) (3) (4)
(1)
∗
(2)
(3)
∗
∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
(1) (2) (3) (4) (5) (4) (6) (7) (8)
Tr1 Source Tr1 Gate Tr2 Source Tr2 Gate Tr2 Drain Tr2 Drain Tr1 Drain Tr1 Drain z Absolute maximum ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 3.5 14 3.5 14 1.3 5.2 2 150
- 55∼+150 Unit V V A A A A A A W ˚C ˚C
Total Power Dissipation(Tc=25˚C) Channel Temperature Storage Temperature
∗
Pw≤10ms, Duty cycle≤1%
+0.1 0.2-
Each lead has same dimensions
+0.1 0.4- 0.1
Transistors z Thermal resistance (Ta=25°C)
Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit ˚C / W z Electrical characteristics (Ta=25°C)
Parameter Gate-Source Leakage Symbol IGSS Min.
- 30
- 1.0
- RDS (on) l Yfs l∗ Ciss Coss Crss td (on)∗ tr∗ td (off)∗ tf∗ Q g∗ Qgs∗ Qgd∗
- - 2.5
- -...
