RDS070N03
RDS070N03 is Excellent Resistance to damage from static electricity manufactured by ROHM.
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Transistors
Switching (30V, 7A)
RDS070N03 z Features 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. z External dimensions (Units : mm)
+0.1 0.4- 0.1
0.15 +0.1 1.5-
Max.1.75
+0.2 5.0-
(5)
(4) z Structure Silicon N-channel MOS FET
(8)
+0.15 3.9- +0.3 6.0- +0.1 0.5-
(1) z Equivalent circuit
(8) (7) (6) (5) (8) (7) (6) (5)
ROHM : SOP8
(4)
(1) (2) (3) (4)
∗
(1) (2) (3)
∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded.
(1) (2) (3) (4) (5) (6) (7) (8)
Source Source Source Gate Drain Drain Drain Drain z Absolute maximum ratings (Ta = 25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP∗ IDR IDRP∗ Is Isp∗ PD Tch Tstg Limits 30 ±20 7 28 7 28 1.6 Unit V V A A A A A A W °C °C
6.4 2.5
- 55~+150
Total Power Dissipation(Tc=25°C) Channel Temperature Storage Temperature
∗Pw≤10µs, Duty cycle≤1%
+0.1 0.2-
Each lead has same dimensions
Transistors z Thermal resistance (Ta = 25°C)
Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit °C/W z Electrical characteristics (Ta = 25°C)
Parameter Gate-Source Leakage Symbol IGSS Min.
- 30
- 1.0
- Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RDS(on)∗ l Yfs l∗ Ciss Coss Crss td(on)∗ tr∗ td(off)∗ tf∗ Q g∗ Qgs∗ Qgd∗
- - 5
- -
- -...
