RF05VAM1S
Key Features
- 4±0.10 0～0.1 TUMD2M lStructure lConstruction Silicon epitaxial planar type lTaping Dimensions (Unit : mm) Cathode Anode lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 100 V Reverse voltage Average current VR Direct voltage Io On glass epoxy substrate 60Hz half sin wave , Resistive load Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C 100 0.5 6 V A A Operating junction temperature Tj - 150 °C Storage temperature Tstg - -55 to +150 °C lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=0.5A - 0.82 0.98 V Reverse current IR VR=100V - 0.01 10 mA Reverse recovery time trr IF=0.5A, IR=1A, Irr=0.25×IR - 12 25 ns Thermal resistance Rth(j-l) Junction to lead - - 30 °C / W © 2015 ROHM Co., Ltd. All rights reserved. 1/4
- 09 - Rev.B
