1) Small mold type (TUMD2M) 2) High speed switching 3) Low forward voltage
(2)
ROHM : TUMD2M Manufacture Date
0.4±0.10
0~0.1
TUMD2M
lStructure
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Cathode Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage Average current
VR Direct voltage
Io
On glass epoxy substrate 60Hz half sin wave , Resistive load
Non-.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Super Fast Recovery Diode
RF05VAM2S
Data Sheet
lSeries Standard Fast Recovery
lApplication High frequency rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.4±0.1 0.8±0.05
(1)
0.17
+0.10 -0.05
1.0±0.10
0.60
+0.20 -0.10
1.1
0.8 0.5 2.0
1.5±0.10
2.0±0.1 2.5±0.2
lFeatures 1) Small mold type (TUMD2M) 2) High speed switching 3) Low forward voltage
(2)
ROHM : TUMD2M Manufacture Date
0.4±0.10
0~0.1
TUMD2M
lStructure
lConstruction Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Cathode Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.