ROHM Semiconductor RF081LAM2S
Super Fast Recovery Diode
MAXIMUM RATINGS
(Ta= 25°C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage VR Average forward rectified current Io Non-repetitive forward surge current IFSM Junction temperature Tj Storage temperature Tstg lElectrical Characteristics (Tj= 25°C) Parameter Symbol Forward voltage Reverse current Reverse recovery time VF IR trr Thermal resistance Rth(j-l) Conditions Duty≦0.5 Direct reverse voltage Glass epoxy board mounted,