ROHM Semiconductor RF081M2S
Super Fast Recovery Diode
RF081M2S Diodes Super fast recovery diode RF081M2S zSeries zDimensions (Unit : mm) 1.6±0.1 0.1±0.1 0.05 zLand size figure (Unit : mm) Standard Fast Recovery 1.2 0.85 zFeatures 1) Small power mold type. (PMDU) 2) High switching speed. 3) Low Reverse current 2.6±0.1 3.5±0.2 PMDU zStructure zConstruction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 zTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Repetitive peak Reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 200 200 0.8 1.0 15 150 -55 to +150 Unit V V A A ℃ ℃ Direct voltage Glass epoxy substrate mounted 50×50mm Glass epoxy substrate mounted 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25℃ Conditions zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal Resistance Symbol VF IR trr Rth(j-l) Min. - - - - - Typ.