ROHM Semiconductor RF1001T2
Fast Recovery Diode
| Part No. | RF1001T2 |
|---|---|
| Datasheet | RF1001T2 Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification● Dimensions (Unit : mm) 4.5±0.3 0.1
● Structure 1.2 1.3 5.0±0.2
●
FEATURES
1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 10.0±0.3 0.1 2.8±0.2 0.1 (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 0.2 13.5MIN 8.0 ①● Construction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date
● Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) Junction temperature Storage temoerature Symbol VRM VR Io IFSM Limits 200 200 10 80 150 -55 to +150 Unit V V A A Tj Tstg (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
● Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance C C Symbol VF IR Min. - Typ. 0.87 0.01 15 - Max. 0.93 10 30 2.5 Unit V μA ns C/W IF=5A VR=200V Conditions trr
● j-c IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE ©2010 ROHM Co., Ltd.
