ROHM Semiconductor RF1001T2D
Fast Recovery Diode
| Part No. | RF1001T2D |
|---|---|
| Datasheet | RF1001T2D Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Fast Recovery Diode |
| Buy | Stock & Price |
APPLICATIONS
General rectification●
FEATURES
1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss●Construction Silicon epitaxial planar
●Dimensions (Unit : mm) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 5.0±0.2 13.5MIN 1.2 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 ROHM : TO220FN Manufacture Date 2.6±0.5 Datasheet
●Structure (1) (2) (3)
●Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io 200 200 10 Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj 80 150 Storage temoerature Tstg 55 to 150 (*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
●Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance Symbol Min. Typ. Max. VF - 0.
