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RF101L2S
Diodes
Fast recovery Diode
RF101L2S
zApplications High frequency rectification zExternal dimensions (Unit : mm)
zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss
1.5±0.2 CATHODE MARK
4.5±0.2
1.2±0.3
1
2
3
4
0.02 0.1 + −0.1
2.6±0.2
2.0±0.2
zConstruction Silicon epitaxial planar
∗ 1 , 2 ···Type No.
3
, 4 ···Manufacturing date
EX. RF101L2S EX. 2003,09
→ →
6,6 3,9
zAbsolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current
∗
Symbol VRM VR IO IFSM Tj Tstg
Limits 200 200 1.0 20 150 −55 to +150
Unit V V A A °C °C
Forward peak surge current (60Hz 1cyc.
RF101L2S Datasheet
