RF101L2S
RF101L2S is Fast recovery Diode manufactured by ROHM.
Diodes
Fast recovery Diode
RF101L2S z Applications High frequency rectification z External dimensions (Unit : mm) z Features 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss
1.5±0.2 CATHODE MARK
4.5±0.2
1.2±0.3
0.02 0.1 +
- 0.1
2.6±0.2
2.0±0.2 z Construction Silicon epitaxial planar
∗ 1 , 2
- -
- Type No.
, 4
- -
- Manufacturing date
EX. RF101L2S EX. 2003,09
→ →
6,6 3,9 z Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current
∗
Symbol VRM VR IO IFSM Tj Tstg
Limits 200 200 1.0 20 150
- 55 to +150
Unit V V A A °C °C
Forward peak surge current (60Hz 1cyc.) Junction temperature Storage temperature
∗ Mounting on glass epoxi board z Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Symbol VF IR Typ. 0.815 10n Max. 0.870 10µ Unit V A IF=1.0A VR=200V IF=0.5A Reverse recovery time trr 12 25 n S IR=1.0A Irr=0.25 IR Conditions
Note) ESD sensitive product handing required.
1/2
5.0±0.3
+
Diodes z Electrical characteristic curves (Ta=25°C)
AVERAGE RECTIFIED CURRENT : IO...
