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RF1501NS3S - Fast Recovery Diodes

Datasheet Summary

Features

  • )Ultra low switching loss 2)High current overload capacity.
  • Construction Silicon epitaxial planer.
  • Structure ② ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day.
  • Taping dimensions (Unit : mm) ① ③.
  • Absolute maximum ratings (Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≤0.5 350 V Reverse voltage VR Direct voltage 300 V Average rectified forward current Io 60Hz half sin wave resistive load at Tc=54°C 20.

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Datasheet preview – RF1501NS3S

Datasheet Details

Part number RF1501NS3S
Manufacturer ROHM
File Size 284.91 KB
Description Fast Recovery Diodes
Datasheet download datasheet RF1501NS3S Datasheet
Additional preview pages of the RF1501NS3S datasheet.

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Full PDF Text Transcription

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Super Fast Recovery Diode RF1501NS3S Series Ultra Fast Recovery Dimensions (Unit : mm) Applications General rectification RF1501 NS3S ① Data Sheet Land size figure (Unit : mm) Features 1)Ultra low switching loss 2)High current overload capacity Construction Silicon epitaxial planer Structure ② ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Taping dimensions (Unit : mm) ① ③ Absolute maximum ratings (Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≤0.
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