RF1001NS2D Overview
Key Features
- Low switching loss
- 200 V 10 A 80 A 150 °C Storage temperature Tstg
- 55 to +150 °C lElectrical Characteristics (Tj = 25°C, per diode) Parameter Symbol Conditions Min. Typ. Max. Unit F
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| C12PH | Vishay | Zener Diode |
| BAS16DXV6 | onsemi | Dual Switching Diode |
| BAS16DXV6T1G | onsemi | Dual Switching Diode |